Study characterization of modern 4h-sic power mosfetsF
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Date
2021-05-05
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Publisher
Università della Calabria
Abstract
Description
Dipartimento di Ingegneria Informatica, Modellistica, Elettronica e Sistemistica
Dottorato di Ricerca in ICT. Ciclo XXXIII
Keywords
SiC Power MOSFETs, Defectiveness, Threshold-Voltage Instability, PBTI, flicker noise, Research Subject Categories::TECHNOLOGY::Information technology::Computer engineering