Study characterization of modern 4h-sic power mosfetsF

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dc.contributor.authorCosentino, Giuseppe
dc.contributor.authorCrupi, Felice
dc.date.accessioned2024-03-07T12:27:14Z
dc.date.available2024-03-07T12:27:14Z
dc.date.issued2021-05-05
dc.descriptionDipartimento di Ingegneria Informatica, Modellistica, Elettronica e Sistemistica Dottorato di Ricerca in ICT. Ciclo XXXIIIen_US
dc.identifier.urihttps://hdl.handle.net/10955/5449
dc.language.isoenen_US
dc.publisherUniversità della Calabriaen_US
dc.relation.ispartofseriesING-INF/01;
dc.subjectSiC Power MOSFETsen_US
dc.subjectDefectivenessen_US
dc.subjectThreshold-Voltage Instabilityen_US
dc.subjectPBTI, flicker noiseen_US
dc.subjectResearch Subject Categories::TECHNOLOGY::Information technology::Computer engineeringen_US
dc.titleStudy characterization of modern 4h-sic power mosfetsFen_US
dc.typeThesisen_US

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